报告人：Dr. Ali Imran 研究员（浙江大学）

时 间：2024年4月9日（周二）9：00-12：00

地 点：物理实验中心229会议室

摘要：

在过去十年中，由于成像设备的高质量和低噪声成像，对成像设备的需求呈指数型增长。然而，它们仍然面临着较高的运行功率、低速度和有限电荷集成的性能限制。在本研究中，我们利用高k的介电材料，实现了基于电偶极子门控光电晶体管的无外栅极偏置无门图像传感。该器件集成了硅、HfO2和石墨烯的光电效应、场效应和可调谐费米能级效应，创建出非破坏性的读出系统。该传感器在低漏极偏置电压0.5 V下，在宽带频谱范围（266-1342 nm）内表现出优异的性能。在800 nm波长入射光照射下，其高响应度、外量子效率和探测率分别为3.7×103 A W-1、0.72×104和6.20×1013 cmHz½W-1;在400 nm波长照射下下，其高响应度、外量子效率和探测率分别为3.3×103 A W-1、1.31×104和5.61×1013 cmHz½W-1。这为消除商用图像传感设备对栅极终端的要求。该器件的节能特性可以在工业化规模上制备，以面向未来的机器视觉市场。

简历：

阿里·伊姆兰博士是浙江大学高级研究员，主要研究方向为光电器件，如光电传感器、光电探测器、光电晶体管和太阳能电池。他的工作重点是神经形态视觉传感器的制造，集成2D/3D材料，高k介电体和铁电体等。他擅长器件制造和表征技术，研究兴趣为HfO2、HAO、HZO、InAs、GaAs、InN、GaN、AlN、MoS2、h-BN和石墨烯基光电器件。曾获新葡的京集团350vip8888国际杰出研究员奖，发表论文32篇，专利1项，出版专著1部。Imran博士在2021年加入浙江大学之前曾在北京大学做过博士后，曾与杭州全球创新与技术中心进行合作研究。

联系方式：syyang@bit.edy.cn

邀请人：杨盛谊教授

网 址：http:/

承办单位：物理学院

*Reporter：Dr. Ali Imran

*Time： 9：00 ~ 12:00 at Apr. 9st, 2024.

*Place：Centre For Quantum Physics 229

*Contact Person: Professor Yang

*Abstract:

The demand for imaging devices has surged exponentially during the last decade owing to their exceptionally high quality and low noise imaging. However, they are still confronting the performance constraints of high operation power, low speed, and limited charge integration. In the present research work, we demonstrate the gateless image sensing based on the electric-dipole gated phototransistor without external gate bias by using high-k dielectric material. The device integrates the photovoltaic, field effect, and tunable fermi level properties of Si, HfO2, and Graphene to create a non-destructive readout system. The sensor exhibits remarkable performance in the broadband spectrum range (266-1342 nm) at a low drain bias voltage of 0.5 V. The high values of responsivity, external quantum efficiency, and detectivity of 3.7×103 A W-1, 0.72×104 and 6.20×1013 cmHz½ W-1, respectively for 800 nm wavelength and 3.3×103 A W-1, 1.31×104, and 5.61×1013 cmHz½ W-1, respectively for 400 nm wavelength are achieved. This discovery can eliminate the requirement for gate terminal from commercial image sensing devices. The power efficient features of the device can be fabricated at the industrial scale for the future machine vision market.

*Profile：

Dr. Ali Imran is a Senior Research Fellow at Zhejiang University, specializing in Optoelectronics devices such as Photosensors, Photodetectors, Phototransistors, and Solar Cells. His work focuses on Neuromorphic Vision Sensors fabrication, integrating 2D/3D materials, high-k dielectrics, and Ferroelectrics. He excels in device fabrication and characterization techniques, with research interests in HfO2, HAO, HZO, InAs, GaAs, InN, GaN, AlN, MoS2, h-BN, and Graphene based devices. He received the Distinguished International Researcher Award from the Beijing Institute of Technology and has 32 research articles, 1 patent, and 1 book, published in respected journals and conferences. Dr. Imran was a postdoctoral fellow at Peking University before joining Zhejiang University in 2021, where he also collaborates with the Hangzhou Global Innovation and Technology Center.